When
Friday, December 5, 2025, 11:00 a.m. MST
Jasmin Aghassi-Hagmann
Professor and Co-Director at the Institute of Nanotechnology
Department of Electrical Engineering and Information Technology
Karlsruhe Institute of Technology
"Materials/Device Co-Design of Printable Oxide Electronics"
Cesar Chavez Building, Room 405
Zoom link | Passcode: 32543
Abstract: Recent advances in inorganic oxide electronics exploiting metal oxides as semiconducting channel materials show a rich portfolio of functional electronic devices and integration possibilities enabling future applications in security, robotics, the display and health sector.
During the talk, I will discuss fully additively manufactured oxide thin film transistors combining aerosol-jet and inkjet printing. Based on these devices, integrated circuits such as physical unclonable functions, ring oscillators and hybrid flexible systems containing thinned silicon electronics are shown. We demonstrate a Pt-temperature sensor, connected to and thinned IC chip and a printed circuit for security-enhanced, automotive sensing applications in cooling hoses.
As a second theme, I will report on printable oxide memristors for neuromorphic and in-memory computing applications. Digital and analog memristors using metal oxides such as ZnO and WO derived from precursor solutions show excellence performance in terms of Roff/Ron ratios (~up to 10^7) and low SET/RESET voltages (<0,5 V) as well as forming free behaviour in the case of the analog memristor. The latter also exhibits interesting properties such as paired pulse facilitation, short term plasticity and signal filtering capabilities.
Besides these two important fundamental electronic devices, we also explore new solution processible materials and their properties. We show, that with complex hybrid materials such as High-Entropy Metal Organic Frameworks (in our case inkjet printable HKUST-1), High-Entropy Prussian Blue Analogues (HE-PBAs) and the introduction of Polyoxymetalates (POMs) unique device properties can be achieved, such as self-compliance and reduced variability in redox based memristors. The results provide an interdisciplinary perspective on practical material/device co-design.
[1] A. Scholz et al., "Hybrid System in Foil Containing Secure Identification and Temperature Sensing Units," in IEEE Journal on Flexible Electronics, vol. 4, no. 6, pp. 242-250, June 2025, https://doi.org/10.1109/JFLEX.2025.3581864
[2] Y. Liu, F. Fischer, H. Hu, H. Gliemann, C. Natzeck, M. Schwotzer, C. Rainer, U. Lemmer, C. Wöll, B. Breitung, J. Aghassi-Hagmann, Inkjet Printed Metal–Organic Frameworks for Non-Volatile Memory Devices Suitable for Printed RRAM. Adv. Funct. Mater. 2025, 35, 2412372. https://doi.org/10.1002/adfm.202412372
[3] Y. He, Y.-Y. Ting, H. Hu, T. Diemant, Y. Dai, J. Lin, S. Schweidler, G. C. Marques, H. Hahn, Y. Ma, T. Brezesinski, P. M. Kowalski, B. Breitung, J. Aghassi-Hagmann, Printed High-Entropy Prussian Blue Analogs for Advanced Non-Volatile Memristive Devices. Adv. Mater. 2024, 2410060. https://doi.org/10.1002/adma.202410060
Bio: Jasmin Aghassi-Hagmann is a full professor and co-director at the Institute of Nanotechnology (INT) of the Karlsruhe Institute of Technology (KIT) in the Department of Electrical Engineering and Information Technology. She received her diploma in physics from RWTH Aachen and PhD from KIT, Karlsruhe. She has spent several years in R&D in the semiconductor industry (Infineon Technologies, Intel) developing advanced CMOS nodes. Her research interests are solution processible materials, 2D and 3D functional printing as well as thin film electronic devices and VLSI circuits. She has authored more than 100 peer-reviewed papers and filed several patents. She serves in various national and international boards, including topic speaker in the Helmholtz Research Program "Materials System Engineering," member of the Helmholtz presidential think tank, principle investigator in the German excellence cluster 3DMM2O, member of the executive editorial boards of Journal of Flexible and Printed Electronics (IOPScience), the IEEE Journal of Flexible Electronics (J-FLEX) and member of the Electron Device Society Technical Committee "Flexible Electronics and Displays."